HBM may account for nearly 30% of industry-wide DRAM capacity next year, says Samsung: Report

NEW DELHI: A top executive at South Korean Samsung Electronics said on Tuesday that high-bandwidth memory (HBM) may account for nearly 30% of dynamic random access memory (DRAM) chipmakers’ total wafer capacity in 2027, an increase from 20% currently, according to a report by news agency Reuters.

Samsung Electronics Executive Vice President Kim Taewoo, however, underscored that as HBM and standard DRAM compete for the same wafer capacity, expanding HBM output could constrain standard DRAM supply.